摘要
该研究报道了在LaAlO3(001)和SrLaAlO4(001)基底上外延生长双层La3Ni2O7薄膜的输运性质,并通过高压氧气退火和静水压进行调控。常压下,LaAlO3基底上的薄膜表现出费米液体金属行为,伴随低温下的轻微Kondo-like上升;而施加0.53至1.41 GPa的静水压后,电阻温度依赖性逐渐演变为非费米液体行为,在1.41 GPa时趋近于~T14。值得注意的是,这一压力仅为单晶中通过金刚石对顶砧实现类似效应所需压力的6–8%,显示出薄膜形式下超乎预期的强可调性。此外,在YAlO3基底上的薄膜中观察到自旋密度波(SDW)序的迹象,而在LaAlO3基底上则被抑制。霍尔效应测量表明多带电子结构。这些结果揭示了La3Ni2O7薄膜在适度压力下即可接近强涨落有序态,为非费米液体行为的起源和高压超导的薄膜化研究提供了新途径。
材料
- La3Ni2O7
- SrLaAlO4 (001)
方法
- epitaxial growth
- transport measurements
- hydrostatic pressure
关键词
- non fermi liquid behavior
- fermi liquid
- kondo effect
- hydrostatic pressure
- tunability
亮点
- Strong tunability of La3Ni2O7 in thin film form and proximity to a strongly fluctuating ordered state leading to non-Fermi liquid behavior under modest applied pressures.
结论
- La3Ni2O7 thin films on LAO(001) exhibit Fermi liquid-like metallic behavior with a slight Kondo-like upturn at low temperatures, evolving toward non-Fermi liquid behavior (T1.4) at 1.41 GPa.
- The ability to tune the normal state to non-Fermi liquid behavior under modest hydrostatic pressure (only 6-8% of DAC pressure in single crystals) is noteworthy.
主要论断
- Fermi liquid to non-Fermi liquid transition in La3Ni2O7 thin films under hydrostatic pressure
- 证据: Transport measurements show that the La3Ni2O7 thin films on LAO(001) exhibit Fermi liquid-like metallic behavior with a slight Kondo-like upturn at low temperatures, which evolves with the application of modest hydrostatic pressures toward non-Fermi liquid behavior with a temperature dependence of resistance approaching ≈ T1.4 at 1.41 GPa.
- Non-Fermi liquid behavior achieved at only 6-8% of the pressure required in single crystals
- 证据: The ability to tune the normal state resistivity of La3Ni2O7 films to display non-Fermi liquid behavior under such a modest hydrostatic pressure range – only 6 - 8 % of that typically applied via diamond anvil cell (DAC) in La3Ni2O7 single crystals to achieve comparable effects – is both noteworthy and unexpected.
- Evidence of spin-density wave ordering in films on YAlO3 substrates
- 证据: Figure 3a displays the sheet resistance Rxy as a function of temperature for the film on YAO(110)… Both the derivative and the raw resistance-temperature data exhibit a pronounced kink near 120 K, suggesting a transition at this temperature.,Similar transitions have been reported for nickelate thin films and single crystals, and were attributed to the spin density wave (SDW) ordering mechanisms.
- Multiband electronic structure in La3Ni2O7 films
- 证据: the calculated Hall coefficient RH is positive at measured temperatures and decreases with increasing temperature. Such behavior may indicate multiband electronic structure of the LNO327 films
研究流程
- sample_preparation — Successfully grew epitaxial bilayer La3Ni2O7 thin films with controlled strain and oxygen content
- 材料: La3Ni2O7 polycrystalline targets; LaAlO3 (001) substrates; SrLaAlO4 (001) substrates; YAlO3 (110) substrates; SrTiO3 capping layer targets; high-pressure oxygen (15 bar)
- 方法: Pulsed laser deposition (KrF excimer laser 248 nm); ex-situ annealing in high-pressure furnace
- 观察: Epitaxial growth confirmed by RHEED and XRD; Films fully strained on substrates with lattice mismatches -1.1% (LAO) and -2% (SLAO); Only films grown at ≈100 mtorr O2 show pure bilayer La3Ni2O7 phase
- transport_measurement — Transport properties show strain-dependent behavior and evolve with pressure
- 材料: La3Ni2O7 thin films on LAO, SLAO, YAO substrates
- 方法: Four-probe resistivity measurement; Hall effect measurement using Van der Pauw configuration; Piston-cylinder cell (PCC) for hydrostatic pressure; Physical Property Measurement System (PPMS)
- 观察: On LAO: metallic behavior with Kondo-like upturn at low T at ambient; On YAO: kink near 120 K indicating SDW transition; Hall coefficient positive, decreasing with T; Under pressure: Kondo upturn suppressed, resistance increases slightly at low T
- data_analysis — Resistance exponent changes from 2 to 1.4 with pressure, indicating transition from Fermi liquid to non-Fermi liquid behavior
- 方法: Power-law fitting: R(T) = R0 + AT^α; Kondo model fitting: R ≈ -ln(T) + T2
- 观察: At ambient: best fit with Kondo model; At0.53 GPa: α = 2 (Fermi liquid); At1.41 GPa: α = 1.4 (non-Fermi liquid)
- interpretation — La3Ni2O7 thin films are tuned close to a quantum critical point under modest pressure, providing a new platform for studying non-Fermi liquid behavior and high-pressure superconductivity
- 方法: Comparison with theoretical predictions for quantum criticality; Comparison with single crystal studies
- 观察: Non-Fermi liquid behavior consistent with spin fluctuation scattering; Pressure required (1.41 GPa) is only 6-8% of that in single crystals; Suggests proximity to SDW quantum critical point