Electron Doping of La₃Ni₂O₇ Thin Films: Candidate Metal Dopants and Their Potential Impact on Superconductivity
Using first-principles density functional theory calculations, we systematically investigate the electron-doping effects of tetravalent element substitution in double-layer Ruddlesden-Popper nickelate La₃Ni₂O₇ thin films. Unlike cuprates, cerium (Ce) doping is found to be inefficient in introducing electron carriers into low-energy bands, whereas zirconium (Zr), hafnium (Hf), and thorium (Th) serve as effective electron dopants. These elemental substitutions significantly enhance the interlayer hopping integral t⊥ between Ni-dz² orbitals, potentially strengthening the interlayer superexchange coupling J⊥ and thereby potentially increasing the superconducting transition temperature Tc. Using the constrained random phase approximation to evaluate interaction parameters, we find that electron doping increases the occupancy of low-energy orbitals (including Ni-dx²-y² and dz² along with their hybridized oxygen orbitals) and alters the electron filling ratio between in-plane and interlayer orbitals. Structural analysis reveals that differences in dopant ionic radii cause variations in Ni–O bond lengths, with Zr and Hf inducing lattice contraction and Th exhibiting the strongest doping effect. These results indicate that Zr, Hf, and Th are promising candidates for achieving electron doping in La₃Ni₂O₇, offering a new avenue to clarify the ongoing debate over the electron pairing mechanism in this system.