Daily Overview: Dear readers, welcome to today’s daily overview of the nickelate superconductor field. The highlight of today focuses on a deeper understanding of the electronic structure of hybrid Ruddlesden-Popper nickelates. In [1], a theoretical study using the DFT+DMOT method reveals that the monolayer-bilayer alternating structure of La₅Ni₃O₁₁ exhibits distinctly different electronic behaviors under ambient pressure. Specifically, the monolayer Ni ions display an orbital-selective Mott insulating state, while the bilayer Ni ions exhibit strongly correlated quasiparticle behavior, with magnetic correlations predominantly governed by the bilayer. This work unveils the critical role of confinement effects and orbital-dependent correlations in determining the physical properties of nickel-based superconductors. Additionally, several other studies in today’s overview are worth noting: - [2] A high-pressure study of the cluster Mott insulator GaNb₄Se₈ demonstrates the evolution from “wavefunction collapse” to superconductivity, providing an ideal platform for understanding pressure-induced Mott transitions in correlated systems. - [3] Proposes a scheme to achieve high-temperature superconductivity on the surface of Weyl semimetals by engineering Van Hove singularities. This interface-enhanced superconductivity mechanism parallels the approach of exploring superconductivity in nickelate thin-film interfaces and is highly inspiring. - [8] Realizes a programmable superconducting diode effect in the nematic superconductor FeSe, demonstrating a method to manipulate the superconducting state by controlling nematic domains. This offers new tuning dimensions and technical paradigms for the study of nickel-based superconductors that exhibit similar electronic correlations and nematic order. The above direct research on nickelates, along with physically related work, constitutes the core content of today’s overview.

1. Electronic structure, quasiparticle renormalizations, and magnetic correlations in the alternating single-layer bilayer nickelate La$_5$Ni$_3$O$_{11}$

Summary: Using the DFT+DMFT method, this study systematically analyzes the electronic structure and magnetic correlation properties of the mixed Ruddlesden-Popper nickelate La₅Ni₃O₁₁ (1212-LNO) under ambient pressure. The results reveal qualitative differences between structurally distinct monolayer and bilayer Ni ions, indicating the importance of confinement effects and orbital-dependent correlations. The e_g electrons of bilayer Ni form strongly renormalized quasiparticle bands, with effective mass enhancement factors of approximately 3.5 and 4.2 for the Ni x²-y² and 3z²-r² orbitals, respectively. In contrast, the e_g states of monolayer Ni exhibit an orbital-selective Mott insulating state: the 3z²-r² state has a narrow gap, while the x²-y² state is metallic and strongly incoherent (non-Fermi liquid). Magnetic correlation analysis shows intertwined spin-charge density wave stripes within the bilayer NiO₆ layers, with the primary instability corresponding to the “up-down-0” spin pattern at wave vector Q=(1/3,1/3), competing with the bicollinear “up-up-down-down” stripe state at (1/4,1/4). The 3d electrons of monolayer Ni tend toward Néel-type magnetic order. Under pressure, 1212-LNO undergoes an orbital-selective Mott insulator-metal transition, where the monolayer Ni e_g states become metallic, displaying non-Fermi liquid (bad metal) behavior. Correlated effects significantly reconstruct the magnetic correlations, shifting the dominant magnetic correlation from DFT-predicted monolayer dominance to bilayer dominance, similar to bilayer nickelates.

2. From Wavefunction Collapse to Superconductivity: Evolution of the Electronic State in Compressed GaNb4Se8

  • Relevance Score: 4.2016
  • Authors: Yuejian Wang, Zhongyan Wu, K C Bhupendra, Dongzhou Zhang, Lin Wang, Sanjay V. Khare, Lilian Prodan, Vladimir Tsurkan
  • Affiliations: Yanshan University, University of Toledo, University of Augsburg, University of Chicago, Moldova State University, Oakland University
  • Link: http://arxiv.org/abs/2604.26203v1

Summary: This study systematically reveals the electronic state evolution of the cluster-based Mott insulator GaNb₄Se₈ under pressure through high-pressure transport measurements, synchrotron X-ray diffraction, and first-principles calculations. At low pressures, the resistance follows the Efros-Shklovskii variable-range hopping mechanism with a localization length of approximately 6.1 Å, close to the Nb₄ cluster spacing (~6.7 Å), confirming a “wavefunction collapse” phenomenon where charge carriers are strictly confined within individual clusters at low temperatures. At about 5 GPa, the system begins transitioning to a metallic state, yet the cubic-to-monoclinic structural phase transition occurs at around 20 GPa, indicating a decoupling between electronic delocalization and changes in structural symmetry. Under high pressure, superconductivity emerges in the correlated metallic state with a coherence length of approximately 80–90 Å. Theoretical calculations demonstrate that pressure suppresses Jahn-Teller distortion and weakens Nb–Se bond strength, thereby broadening the Nb 4d band and leading to the collapse of the Mott insulator. These results establish GaNb₄Se₈ as an ideal platform for investigating transport evolution governed by correlation effects in cluster-based solids.

3. Engineering superconductivity on the surface of Weyl semimetals

Summary: This study proposes a feasible scheme to achieve high-temperature superconductivity on the surface of Weyl semimetals through material interface engineering. Using PtBi₂ as a specific model, it is theoretically demonstrated that depositing an appropriate additional layer on the Weyl semimetal surface can induce a surface van Hove singularity, which originates from the dispersion distortion of topologically protected Fermi arcs due to long-range hopping (e.g., third-nearest-neighbor hopping). Employing a variational mean-field method based on free energy minimization to calculate the superconducting properties under s-wave pairing, it is found that when the chemical potential approaches the van Hove singularity energy, the surface superconducting critical temperature is enhanced by more than 30 times compared to the bulk, with a sharp asymmetry: below the singularity, the quasi-one-dimensional conical dispersion leads to good Fermi surface nesting, while above the singularity, nesting conditions disappear. This mechanism naturally explains the experimentally observed surface superconducting transition temperature (approximately 5 K) being much higher than the bulk (approximately 0.2 K) in PtBi₂, as well as the highly dispersed superconducting gap values among different samples. By integrating out the capping layer to obtain an effective interface Green’s function, it is proven that selective hybridization can equivalently realize surface long-range hopping, thereby providing an experimentally accessible tuning pathway for engineering two-dimensional high-temperature superconductivity and other topological quantum phases.

4. Superconductivity-Enabled Conversion of Ferromagnetic Resonance into Standing Spin Waves

  • Relevance Score: 3.8143
  • Authors: Ya. V. Turkin, N. G. Pugach, F. M. Maksimov, A. S. Pakhomov, A. I. Chernov, V. I. Belotelov, S. N. Polulyakh, V. S. Stolyarov
  • Link: http://arxiv.org/abs/2604.27076v1

Summary: This study experimentally and theoretically demonstrates that a conventional diffusive superconductor (Nb) can convert the uniform ferromagnetic resonance (FMR) mode in an adjacent ferromagnetic insulator (Bi-GdIG) into perpendicular standing spin waves (PSSW). In Bi-GdIG/Nb bilayers, an additional resonance peak emerges in the microwave transmission spectrum only when the temperature is below the superconducting transition temperature of Nb, and it appears adjacent to the uniform FMR peak. Microscopic theory, combining the quasiclassical Keldysh–Usadel equation with Landau–Lifshitz–Gilbert dynamics, reveals that the conversion mechanism relies on two cooperative elements: interfacial spin-transfer torque mediated by spin-polarized triplet Cooper pairs and a depth-dependent effective field generated by Abrikosov vortices. This mechanism enables energy transfer from the uniform mode to the lowest-order exchange-standing mode without requiring eddy currents or inhomogeneous microwave fields, and it can be tuned via temperature, magnetic field, and supercurrent biasing. This provides a new avenue for engineering low-dissipation spin-wave modes in superconducting hybrid platforms.

5. Non-local Tunneling Spectroscopy of Inelastic Quasiparticle Relaxation in Superconducting 1-D Wires

  • Relevance Score: 3.7819
  • Authors: Kevin M. Ryan, Detlef Beckmann, Venkat Chandrasekhar
  • Affiliations: National Institute of Standards and Technology
  • Link: http://arxiv.org/abs/2604.26862v1

Summary: This study employs mesoscopic three-terminal Cu and Al normal metal–insulator–superconductor (NIS) devices to investigate nonlocal quasiparticle transport on the scale of the superconducting coherence length. Using a dual-bias scheme (with the detector biased both above and below the superconducting gap) and symmetry analysis to extract signals from the effect of quasiparticle energy imbalance on the self-consistent pair potential, we observe pair-breaking-induced nonlocal conductance features that are antisymmetric with respect to voltage bias polarity and exhibit a sharp onset near the single-electron tunneling energy of approximately 3Δ. By comparing experimental results with quasiclassical simulations incorporating inelastic effects, we obtain estimates of the energy-dependent inelastic scattering time. Additionally, we demonstrate dynamical effects arising from large supercurrents, which can be decomposed within the same formalism based on particle-hole symmetry and supercurrent direction. These findings provide a spectroscopic tool for a deeper understanding of nonequilibrium relaxation and transport mechanisms of quasiparticles in superconductors, and they point to future developments of this methodology.

6. Resolving growth-induced off-stoichiometry in AgCrSe$_2$ single crystals

  • Relevance Score: 3.6306
  • Authors: Felix Eder, Zeno Maesen, Yurii Skourski, Enrico Giannini, Oksana Zaharko, Fabian O. von Rohr
  • Affiliations: Helmholtz-Zentrum Dresden-Rossendorf, University of Geneva, PSI
  • Link: http://arxiv.org/abs/2604.26887v1

Summary: Layered delafossite-type antiferromagnet AgCrSe₂ is a superionic conductor at high temperatures, and at low temperatures, it has been reported to exhibit anomalous Hall effect and Kondo-like physics. These abnormal transport properties have been almost entirely based on single crystals grown by chemical vapor transport (CVT) using CrCl₃ as a transport agent, which systematically introduces off-stoichiometry, resulting in an actual composition of Ag₁₋ₓCr(Se₂₋ᵧClᵧ) (x ≈ y ≈ 0.08). Through elemental analysis, single-crystal X-ray diffraction, and magnetization measurements, this work confirms that chlorine incorporation and silver deficiency in CVT crystals significantly alter the magnetic properties, reducing the Néel temperature to 46 K, compared to 58 K for stoichiometric polycrystalline samples prepared by solid-state synthesis. To address this issue, researchers optimized the Ag/Se self-flux growth method combined with hot centrifugation separation, successfully obtaining large stoichiometric AgCrSe₂ single crystals. The magnetic transition temperature and saturation field of these self-flux crystals are fully consistent with those of stoichiometric polycrystalline samples, restoring the intrinsic magnetic behavior. This study demonstrates that self-flux growth is a reliable approach for preparing high-quality stoichiometric AgCrSe₂ single crystals, providing a stable and comparable material platform to re-examine whether the previously reported anomalous transport phenomena are intrinsic or caused by off-stoichiometry.

7. Revealing magnetism in the distorted kagome $R$Ti$_3$Bi$_4$ ($R$ = Nd, Sm, Gd) via ARPES and XMCD

  • Relevance Score: 3.5861
  • Authors: C. Lim, F. Ballester, A. Kar, M. Alkorta, D. Subires, J. Dai, M. Tallarida, E. Vescovo, T. K. Kim, C. Cacho, C. Yi, S. Roychowdhury, A. Kumar Sharma, Y. Choi, G. Fabbris, J. Strempfer, P. Gargiani, C. Shekhar, C. Felser, I. Errea, M. G. Vergniory, S. Blanco-Canosa
  • Link: http://arxiv.org/abs/2604.26636v1

Summary: This study systematically investigates the electronic and magnetic structures of the distorted kagome materials R Ti₃Bi₄ (R = Nd, Sm, Gd) using angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and X-ray magnetic circular dichroism (XMCD). ARPES and DFT reveal that the bulk electronic bands are primarily dominated by the hybridization of Ti orbitals, while a weak electron-type pocket near the Γ point is identified as a surface state. Isotropic X-ray absorption spectra (XAS) at the rare-earth M₄,₅ edges confirm that R exists in the R³⁺ oxidation state. Applying XMCD sum rules supplemented by atomic multiplet theory calculations, the spin and orbital magnetic moments are obtained. XMCD at the Ti L₂,₃ edges indicates a small magnetic moment at the Ti site in GdTi₃Bi₄, which is attributed to the nearest-neighbor coupling between the Ti kagome layer and the Gd zigzag chains, and the total magnetic moment of Gd arises from contributions of both f and d electrons. This comprehensive investigation provides critical insights into the spin-flip transitions and anomalous Hall effect observed in R Ti₃Bi₄ kagome metals.

8. Programmable superconducting diode from nematic domain control in FeSe

  • Relevance Score: 3.5200
  • Authors: R. D. H. Hinlopen, C. Putzke, L. Holeschovsky, R. Nicholls, F. Ronning, E. D. Bauer, N. E. Hussey, P. J. W. Moll
  • Affiliations: University of Bristol, Los Alamos National Laboratory, HFML-FELIX, Max Planck Institute for Structure and Dynamics of Matter
  • Link: http://arxiv.org/abs/2604.26631v2

Summary: In the nematic superconductor FeSe, researchers have realized a programmable superconducting diode effect through the interaction between electronic domain walls and vortices. By employing low-temperature focused ion beam processing on high-quality single crystals, they ensured a high degree of device symmetry to eliminate geometric factors that could cause symmetry breaking. Experimental results showed that when the magnetic field direction is nearly aligned with the nematic twin boundaries, the current–voltage curves exhibit a significant polarity-dependent difference in critical current, achieving a diode efficiency as high as approximately 75%. This nonreciprocal transport originates from the asymmetric pinning of vortices at nematic domain walls, where the domain wall configuration directly encodes the polarity and magnitude of the diode effect. By applying large current pulses with durations as short as microseconds (quenching rates exceeding 10^7 K/s), the sample can be rapidly heated above the nematic phase transition temperature and subsequently cooled quickly, altering the domain distribution and enabling deterministic switching of the diode polarity and efficiency. This method allows repeated writing of different diode states under the same magnetic field and temperature, demonstrating a new paradigm for programming correlated-electron-state patterns in superconducting circuits, and offers a general design strategy for other superconductors with low-temperature electronic nematic order, such as iron-based superconductors.

9. Metalization of topological insulators

Summary: This paper proposes that in systems dominated by Berry curvature, the traditional criterion for distinguishing metals from insulators based on the presence or absence of carriers near the Fermi surface fails, as transport is governed by interband quantum coherence across the entire Fermi sea. Using the BHZ model of HgTe/CdTe quantum wells and a quantum master equation approach, the authors develop a microscopic transport theory for bulk topological insulators when the density of states at the Fermi level is zero. They find that impurity scattering causes the decay of interband coherence (i.e., quantum decoherence), which creates a new longitudinal transport channel in topologically trivial regions without edge contributions. The conductivity of this channel scales linearly with impurity density in the dilute impurity limit (contrary to Drude’s inverse relation) and remains finite when the Fermi level lies in the bulk band gap; moreover, its resistivity is inversely proportional to temperature, resembling strange metal behavior. This decoherence-induced transport mechanism fundamentally challenges the metal-insulator dichotomy based on band theory, suggesting that quantum decoherence can serve as a source of longitudinal response beyond the Drude paradigm.

10. Large magnetoresistance and weak-antilocalization in the nodal-line semimetal VP2

  • Relevance Score: 3.4606
  • Authors: Chunxiang Wu, Shuijin Chen, Tingyu Zhou, Le Liu, Xin Peng, Jianjian Jia, Xinyu Yu, Hangdong Wang, Jinhu Yang, Jianhua Du, Minghu Fang
  • Link: http://arxiv.org/abs/2604.26480v1

Summary: Researchers have successfully grown high-quality VP2 single crystals and, through systematic measurements of longitudinal and Hall resistivities combined with electronic band structure and Fermi surface calculations, confirmed that VP2 is a type-II nodal-line semimetal. Under high magnetic fields, the magnetoresistance exhibits linear behavior without saturation, reaching 170% at 40 K and 9 T; this behavior is dominated by the intrinsic electronic structure and Lorentz force, as verified by resistivity anisotropy measurements and numerical simulations. Additionally, approximately 2.24% V⁴⁺ magnetic impurities (spin-1/2) are present in the crystals, leading to a Kondo effect minimum in the resistivity at low temperatures, while the low-field conductance shows typical weak antilocalization behavior that can be fitted by the Hikami-Larkin-Nagaoka equation. This study indicates that VP2 provides an ideal platform for exploring the electronic transport properties of topological materials containing magnetic impurities.

11. Negative nonlocal and local voltages (resistances) in a quasi-one-dimensional superconducting aluminum structure

Summary: This study explores nonlocal electron transport mechanisms by measuring negative nonlocal and local DC voltages in quasi-one-dimensional superconducting aluminum structures near the critical temperature under a magnetic field. The structures consist of wide and narrow wires, operating in the normal-superconducting transition temperature range (T_cn < T < T_cw). Experiments reveal that when current flows through the wide wire and the connected narrow wire, both negative nonlocal voltage and negative local voltage appear simultaneously under a specific measurement circuit configuration, with magnitudes increasing linearly with current to a peak and then sharply dropping, while no such phenomenon is observed in other circuit configurations. The generation of negative voltage is attributed to charge imbalance induced by quasiparticle currents across the normal-superconducting interface. The researchers plotted the temperature and magnetic field dependencies of the current, resistance, and voltage at the negative voltage peak, and performed fitting based on equilibrium and non-equilibrium superconducting fluctuation theories, incorporating Aslamazov-Larkin and Maki-Thompson corrections. The results show that the peak currents for negative nonlocal and local voltages coincide with the superconducting critical current, and the negative resistances are approximately -1.2 Ω and -0.5 Ω. The study reveals the key role of quasiparticle charge imbalance in nonlocal transport, providing experimental evidence for understanding non-equilibrium effects related to superconducting fluctuations.

12. Hidden Crossover and Relaxor-Like Response from Emerging Polar Skyrmion Correlations in Ferroelectric Superlattices

Summary: Through large-scale phase-field simulations, researchers have uncovered a hidden thermal crossover of polar skyrmions deeply embedded within the ferroelectric phase of ferroelectric superlattices: as temperature decreases, skyrmions evolve from a randomly distributed, layer-uncorrelated state to an ordered stacking with interlayer correlation. This crossover does not involve additional symmetry breaking or new order parameters, yet it generates a pronounced broad dielectric peak in the intermediate temperature range. This anomaly originates from the competition between two effects: the correlation-enhanced dielectric response driven by increasing interlayer skyrmion correlations and the polarization stiffness that suppresses dielectric fluctuations at low temperatures. More critically, under an alternating electric field, this dielectric peak shifts toward higher temperatures with increasing frequency, exhibiting typical relaxor ferroelectric behavior despite the absence of compositional disorder or polar nanoregions in the system. This indicates that collective correlations of topological defects can produce relaxor-like responses without the conventional order-disorder mechanism. This work establishes a new paradigm where topological defect correlations serve as an organizing principle for thermodynamic anomalies and provides a stray-free pathway to engineer dielectric responses by tuning interlayer polarization contrast.

13. Finite-Temperature Ferromagnetic Correlations of the Kagome Lattice Hubbard Model

Summary: Using two accurate finite-temperature methods, numerical linked-cluster expansion and determinant quantum Monte Carlo, this study systematically investigates the variation of ferromagnetic correlations with doping and interaction strength in the Kagome lattice Hubbard model. It is found that repulsive interactions significantly enhance ferromagnetic correlations at high electron densities; as the interaction strength increases, the region of strong ferromagnetic correlations extends from near the band insulator toward half-filling, smoothly connecting with the Nagaoka ferromagnetism near the Mott insulating regime. Through charge compressibility calculations, the critical interaction strength for the metal-insulator transition at half-filling is precisely estimated. These results deepen the understanding of magnetic tendencies away from half-filling and lay the foundation for subsequent studies in systems such as ultracold atoms in optical lattices.

14. Influence of strain on the anomalous Hall and Nernst effects in Fe thin films

  • Relevance Score: 3.2272
  • Authors: Ao Nakagawa, Ryo Toyama, Keisuke Masuda, Weinan Zhou, Hirofumi Suto, Kodchakorn Simalaotao, Yoshio Miura, Yuya Sakuraba, Tetsunori Koda
  • Affiliations: National Institute of Technology, Oshima college, University of Tsukuba, Kyoto Institute of Technology, National Institute for Materials Science (NIMS)
  • Link: http://arxiv.org/abs/2604.26257v1

Summary: By epitaxially growing Fe thin films on MgO and MgAl₂O₄ substrates, this study systematically modulated strain through substrate mismatch and deposition conditions, and combined scaling law analysis with first-principles calculations to investigate the effects of strain on the anomalous Hall effect (AHE) and anomalous Nernst effect (ANE). Scaling analysis revealed that the intrinsic anomalous Hall conductivity (AHC) varies with the tetragonal distortion ratio (c/a) and closely aligns with theoretical calculations based on Berry curvature corrections, confirming the strain-mediated modulation of the intrinsic AHE mechanism. However, the anomalous Nernst conductivity (ANC) deviates significantly from theoretical predictions and exhibits a markedly different c/a dependence. These results highlight a key distinction in the physical origins of AHC and ANC in Fe films: AHC is primarily governed by the intrinsic Berry curvature mechanism, whereas ANC is strongly influenced by extrinsic contributions such as scattering.

15. Emergent surface resonance from charge density wave symmetry breaking in TiSe2

  • Relevance Score: 3.2204
  • Authors: Turgut Yilmaz, Yi Sheng Ng, Muhammad Awais Fiaz, Anil Rajapitamahuni, Asish K. Kundu, Shawna M. Hollen, Polina M. Sheverdyaeva, Paolo Moras, Ivana Vobornik, Jun Fujii, Shinichiro Ideta, Kenya Shimada, Boris Sinkovic, Elio Vescovo, Hui-Qiong Wang, Jin-Cheng Zheng
  • Link: http://arxiv.org/abs/2604.26685v1

Summary: This study identifies a surface resonance state (SRS) induced by charge density wave (CDW) symmetry breaking in 1T-TiSe₂. Experimentally, micro-angle-resolved photoelectron spectroscopy (μ-ARPES), combined with photon-energy-dependent measurements and polarization analysis, resolves a sharp two-dimensional SRS in the CDW-reconstructed low-energy spectrum, whose dispersion exhibits negligible variation with kz, indicating quasi-two-dimensional character and surface localization. The spectral weight of the SRS significantly weakens and vanishes at approximately 160 K, whereas the bulk CDW transition temperature is typically 202 K. Density functional theory (DFT+U) slab calculations reveal that CDW folding brings the valence and conduction bands near degeneracy, selectively forming localized resonant states on the surface, with their formation modulated by correlation effects. This SRS is neither a simple topological surface state nor a CDW-folded replica band but rather a surface-localized state embedded within the bulk continuum. The findings demonstrate that the interplay between CDW symmetry breaking and electronic correlations can generate novel surface states, providing a general framework for designing low-dimensional quantum states in van der Waals layered materials through symmetry breaking and band engineering.

16. Tracking visible pulsed laser annealing of Hf$_{0.5}$Zr$_{0.5}$O$_2$ heterostructures with in situ transmission electron microscopy

  • Relevance Score: 3.1923
  • Authors: Aida Amini, Shruti Verma, Katharina Kohlmann, Sebastian Obernberger, Jean-Christof Lamanque, Andreas Rüdiger, Kenneth R. Beyerlein
  • Affiliations: Institut national de la recherche scientifique (INRS)
  • Link: http://arxiv.org/abs/2604.26718v2

Summary: This study employed visible nanosecond pulsed laser annealing on Si₃N₄/TiN/Hf₀.₅Zr₀.₅O₂ thin film heterostructures, with in situ transmission electron microscopy used to track the crystallization process in real time. Due to the wide bandgap of HZO, the work utilized the absorption of visible light in TiN to generate heat, thus avoiding photochemical interference. The critical laser energy density and ferroelectric phase fraction were systematically measured for different HZO thicknesses (7, 8, and 15 nm), revealing a clear threshold behavior: an 8 nm film subjected to a single pulse energy density of 177 mJ/cm² achieved 86% ferroelectric orthorhombic phase (oIV-HZO). Finite element simulations elucidated the heat transfer dynamics within the heterostructure, indicating that partial melting of the silicon nitride substrate limited the temperature to 1900°C, and the observed threshold behavior supported a kinetic crystallization pathway involving a tetragonal intermediate phase. Quantitative phase analysis confirmed that oIV-HZO was the dominant phase in all samples after laser annealing, with oIV phase fractions of 76% and 63% for the 7 nm and 15 nm films, respectively. These results demonstrate that visible light pulsed laser annealing can achieve efficient ferroelectric phase engineering of HZO thin films, offering a new route for back-end-of-line compatible scalable fabrication of ferroelectric devices.

17. Achieving Large Uniaxial and Homogeneous Strain in Two-Dimensional Materials

  • Relevance Score: 3.1246
  • Authors: Yangchen He, Jessica Kienbaum, Wuzhang Fang, Hongrui Ma, Ying Wang, Ping Yuan, Daniel A. Rhodes
  • Affiliations: University of Wisconsin-Madison
  • Link: http://arxiv.org/abs/2604.26164v1

Summary: This paper reports a high-yield sample preparation and device strain platform that overcomes the limitations of traditional two-dimensional material strain engineering, including small strain ranges (typically below 1.5%), poor cyclic repeatability, and low strain transfer efficiency at low temperatures. The platform forms controllable trenches on a silicon substrate via lithography and deep etching, enhances strain transfer by using a polycaprolactone (PCL)-functionalized surface, and employs a substrate cracking process to ensure uniform height on both sides of the trench. Experiments show that this platform achieves uniform uniaxial strains of up to approximately 4% in two-dimensional materials such as CrSBr, with a linear relationship between strain and driving voltage and negligible slip during cycling. Furthermore, controllable linear strain gradients (up to 0.06%/μm) can be designed over tens of micrometers, providing a new route for systematic studies of flexoelectric and flexomagnetic phenomena. This method is applicable to a variety of transition metal dichalcogenides (e.g., 2H-MoTe₂, 1T′-MoTe₂, and T_d-WTe₂), achieving a record strain of approximately 5.5% in T_d-WTe₂, accompanied by a continuous redshift of the Raman A₁³ mode and its clear separation from the A₁² mode at 2% strain. This platform overcomes previous strain technology bottlenecks, enabling reversible strain modulation limited only by the material’s intrinsic fracture strength, and operates stably at low temperatures.

18. Third-order intrinsic anomalous Hall effect as a transport fingerprint of altermagnets

  • Relevance Score: 3.1186
  • Authors: Longjun Xiang, Hao Jin, Jian Wang
  • Affiliations: Shenzhen University, The University of Hong Kong, Quantum Science Center of Guangdong-Hongkong-Macao Greater Bay Area (Guangdong)
  • Link: http://arxiv.org/abs/2604.26665v1

Summary: Based on spin group symmetry analysis, this study demonstrates that the third-order intrinsic anomalous Hall effect is universally allowed in ten spin Laue groups associated with altermagnets when spin-orbit coupling is considered. By combining symmetry constraints with second-order Berry curvature-induced anomalous velocity, a resonant third-order intrinsic anomalous Hall effect is discovered near altermagnetic band crossings in the Lieb lattice altermagnet and experimentally realized V₂Se₂O. The study further identifies the Berry curvature quadrupole moment (activated by finite spin-orbit coupling) encoded in the second-order Berry curvature as the microscopic quantum geometric origin of this resonance. These results establish the third-order intrinsic anomalous Hall effect as an intrinsic quantum geometric transport fingerprint of altermagnets and extend the hierarchy of intrinsic anomalous Hall effects in collinear quantum magnets.

19. Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices

  • Relevance Score: 3.1041
  • Authors: Chuanqi Zheng, Chushan Li, Ke Huang, Chenyu Zhang, Kenji Watanabe, Takashi Taniguchi, Hao Yang, Dandan Guan, Liang Liu, Shiyong Wang, Yaoyi Li, Hao Zheng, Canhua Liu, Jinfeng Jia, Xueyang Song, Zhiwen Shi, Guorui Chen, Xiao Li, Tingxin Li, Xiaoxue Liu
  • Affiliations: Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shanghai Research Center for Quantum Sciences, Hefei National Laboratory, Shanghai Jiao Tong University, Southern University of Science and Technology, City University of Hong Kong, Hong Kong University of Science and Technology, National Institute for Materials Science
  • Link: http://arxiv.org/abs/2604.26643v1

Summary: This paper systematically investigates the transport properties of the hole-doped side in rhombohedral tetralayer graphene (RTG)/hexagonal boron nitride (hBN) moiré superlattices. By varying the twist angle and alignment orientation, multiple Chern insulators with high Chern numbers are observed. At integer moiré filling ν = -1, the previously reported C = -4 integer Chern insulator is obtained; meanwhile, newly discovered symmetry-broken Chern insulating states are found at fractional filling ν ≈ -2.5 or -2.6, with Chern numbers of +3, ±2, and ±1. These Chern insulating states appear in both hBN orientations but are highly sensitive to the moiré wavelength: the C = -4 state exists only when the moiré wavelength exceeds 13 nm, while the other states exhibit more complex wavelength dependence. Furthermore, all these states can be effectively tuned by the moiré wavelength, displacement field, and external magnetic field, and the states at fractional fillings are suppressed in a vertical magnetic field of about 0.3–0.5 T. The results reveal unique topological band structures in hole-doped RTG/hBN moiré superlattices, providing a highly tunable platform for exploring correlated topological phases in flat bands with high Chern numbers.

20. The Meissner effect does not require radial charge flow

Summary: This paper points out that the emergence of persistent currents in the Meissner effect originates from the quantization of Cooper pair angular momentum, rather than from radial charge flow and the action of the Lorentz force. Traditional superconductivity theories (such as Ginzburg-Landau theory and BCS theory), based on the wave function proposed by Landau in 1941, treat angular momentum quantization as the core mechanism for explaining the Meissner effect and flux quantization, the latter having been experimentally verified (e.g., observations of flux quantization in thick-wall and thin-wall cylinders). In contrast, Jorge Hirsch’s hole superconductivity theory posits radial charge flow as a necessary prerequisite, but this paper emphasizes that the persistent current resulting from quantization is not merely a theoretical deduction but a robust experimental fact that cannot be explained by the Lorentz force. Furthermore, by analyzing why macroscopic quantum phenomena violate the correspondence principle—such as Cooper pairs, as bosons, occupying the ground state, and the duality of the wave function increasing the kinetic energy dispersion of macroscopic condensates—the paper further demonstrates how angular momentum quantization can be observed at macroscopic scales. Therefore, explaining the Meissner effect does not require invoking radial charge flow.