Daily Overview: Hello readers, welcome to today’s rapid overview of papers in the nickel-based superconductivity field. Although no paper directly focuses on nickelates today, several works are highly relevant to the core issues currently under investigation in this field, from perspectives such as superconducting pairing mechanisms, interface physics, and materials preparation. Among them, [3] systematically studies the FFLO superconducting states driven by two types of alternating magnetic order—(d_{xy}) and (d_{x^{2}-y^{2}})—in two-dimensional lattices, revealing the stabilization conditions over a wide parameter range at low fillings, providing theoretical clues for exploring possible finite-momentum pairing in nickel-based superconductors. [1] reviews mechanisms such as Ising pairing and superconductor/ferromagnet proximity effects in van der Waals superconducting electronics; the concepts of interfacial tunability and nonreciprocal transport discussed therein offer insights for understanding interface superconductivity in nickelate heterostructures. [5] definitively rules out magnetic order in RuO₂ using X-ray linear dichroism, and this conclusion also holds methodological reference value for clarifying the controversy over spin configurations in nickelates. Additionally, [4] presents the epitaxial synthesis and electronic structure characterization of metastable TaO₂ thin films, demonstrating stabilization strategies for oxide metastable phases, which may provide process inspiration for phase engineering of nickelate thin films. Collectively, these works enrich the physical and materials understanding relevant to nickel-based superconductivity from different perspectives. arXiv submission processing window: 2026-01-10 20:02 to 2026-01-11 18:19 UTC.

1. Van der Waals superconducting electronics: materials, devices and circuit integration

Summary: Van der Waals superconductors, owing to their atomically thin layered structures and stackable heterojunction characteristics, exhibit unique advantages in superconducting electronics. This review systematically summarizes their physical mechanisms, including Ising pairing, band inversion, and the proximity effect at superconductor/ferromagnet interfaces, which endow these materials with properties such as high in-plane critical fields, electrostatic tunability, and non-reciprocal transport that are unattainable in conventional superconductors. Based on these features, the review surveys various van der Waals superconducting devices, such as gate-tunable devices, superconducting diodes, and circuit elements for qubit readout and control. Although preliminary experimental evidence has emerged for topological superconductivity, conclusive proof is still lacking and requires further precisely controlled studies. Finally, the paper discusses wafer-scale growth and deterministic assembly techniques, identifying them as critical pathways for transitioning van der Waals devices from prototypes to practical applications in low-temperature electronics and quantum technologies.

2. Comparison of Two-Level System Microwave Losses in Pure Bulk Microcrystalline Nb2O5 and NbO2 Oxide Samples

Summary: This study employs a superconducting three-dimensional microwave cavity to directly compare the two-level system (TLS) microwave loss characteristics of commercial pure microcrystalline Nb₂O₅ and NbO₂ bulk powders. The oxide powders were mixed with nail polish and coated onto a sapphire substrate, which was then placed at the region of maximum electric field within a niobium cavity; the loss was characterized by measuring the intrinsic quality factor at varying microwave powers and temperatures. Control experiments confirmed that neither the empty cavity nor the bare sapphire substrate exhibited measurable TLS loss. For the Nb₂O₅ samples, the quality factor decreased significantly at low power, and the power and temperature dependence conformed to predictions of the standard tunneling model, with a fitted exponent β indicating the presence of interacting TLSs, thereby demonstrating that the TLS loss originates from either the Nb₂O₅ bulk phase or the oxide-vacuum interface. In contrast, the NbO₂ samples displayed no TLS loss characteristics across the entire power range. Based on these results, the paper proposes that if the native oxide layer on practical niobium cavities were primarily composed of high-quality microcrystalline NbO₂ rather than Nb₂O₅, it could potentially reduce TLS loss, offering a material-level reference for strategies to isolate oxide-specific loss in superconducting quantum devices.

3. Altermagnetism-driven FFLO superconductivity in finite-filling 2D lattices

Summary: This paper systematically investigates finite-momentum FFLO superconducting states driven by two types of altermagnetic order—d_{xy}-wave and d_{x^{2}-y^{2}}-wave—at finite doping in the two-dimensional square-lattice Hubbard model. Methodologically, it combines the mean-field Bogoliubov–de Gennes equation solution for the superconducting phase with a pairing instability analysis of the normal state based on the Thouless criterion, and introduces next-nearest-neighbor hopping into the single-particle dispersion. The key findings reveal that the two altermagnetic orders have markedly different stabilizing effects on the FFLO state: d_{xy}-wave altermagnetism supports FFLO superconductivity over a broad parameter regime at low doping, whereas d_{x^{2}-y^{2}}-wave order induces FFLO pairing only in a narrow range at high doping. Furthermore, van Hove singularities in the density of states suppress FFLO superconductivity. The conclusion indicates that these results provide theoretical guidance for the experimental exploration of altermagnetism-induced FFLO states in real materials with more complex electronic structures.

4. Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy

  • Relevance Score: 3.4461
  • Authors: Yorick A. Birkhölzer, Anna S. Park, Noah Schnitzer, Jeffrey Z. Kaaret, Benjamin Z. Gregory, Tomas A. Kraay, Tobias Schwaigert, Matthew R. Barone, Brendan D. Faeth, Felix V. E. Hensling, Iris C. G. van den Bosch, Ellen M. Kiens, Christoph Baeumer, Enrico Bergamasco, Markus Grüninger, Alexander Bordovalos, Suresh Chaulagain, Nikolas J. Podraza, Waldemar Tokarz, Wojciech Tabis, Matthew J. Wahila, Suchismita Sarker, Christopher J. Pollock, Shun-Li Shang, Zi-Kui Liu, Nongnuch Artrith, Frank M. F. de Groot, Nicole A. Benedek, Andrej Singer, David A. Muller, Darrell G. Schlom
  • Affiliations: University of Toledo, AGH University of Krakow, University of Cologne, University of Twente, Cornell University, Binghamton University, Utrecht University, Max Planck Institute for Solid State Research, Leibniz-Institut für Kristallzüchtung, The Pennsylvania State University
  • Link: http://arxiv.org/abs/2601.06716v3

Summary: This study successfully epitaxially stabilized metastable TaO₂ thin films on r-plane sapphire (Al₂O₃(1-102)) substrates using suboxide molecular beam epitaxy (S-MBE) and thermal laser epitaxy (TLE), achieving single-orientation, single-domain anisotropic strain growth. Microstructural characterization was performed via synchrotron X-ray diffraction and scanning transmission electron microscopy, while X-ray absorption/photoelectron spectroscopy and electron energy-loss spectroscopy confirmed the +4 valence state of tantalum. Optical property measurements revealed a Mott gap of 0.3 eV for the tantalum 5d electrons. Density functional theory and group theory analyses indicated the limited stability of rutile-phase TaO₂ and unveiled a possible hidden metal-insulator transition accompanying its structural phase transition (to a distorted rutile phase), analogous to NbO₂. This work expands the understanding of tantalum oxides and lays the foundation for their integration into next-generation electronic and photonic devices.

5. Absence of magnetic order in epitaxial RuO2 revealed by X-ray linear dichroism

  • Relevance Score: 3.1072
  • Authors: Siyu Wang, Chao Wang, Yanan Yuan, Jiangxiao Li, Fangfang Pei, Daxiang Liu, Chunyu Qin, Jiefeng Cao, Yamei Wang, Tianye Wang, Jiayu Liu, Jieun Lee, Guanhua Zhang, Christoph Klewe, Chenchao Yu, Fan Zhang, Dongsheng Song, Kai Chen, Weisheng Zhao, Dawei Shen, Ziqiang Qiu, Mengmeng Yang, Bin Hong, Qian Li
  • Affiliations: University of California at Berkeley, Lawrence Berkeley National Laboratory, Anhui University, Chinese Academy of Sciences, University of Science and Technology of China, Beihang University
  • Link: http://arxiv.org/abs/2601.06791v1

Summary: This study systematically examined the magnetic ordering of epitaxial RuO₂ thin films using X-ray linear dichroism (XLD) combined with photoemission electron microscopy and multiple-scattering calculations. Experimental results showed that the XLD signals of RuO₂ were almost independent of temperature and the direction of the cooling magnetic field, which significantly contradicted the magnetically ordered XLD signals predicted by multiple-scattering calculations, strongly suggesting a nonmagnetic origin for RuO₂. Furthermore, RuO₂ films grown on TiO₂ substrates with different orientations exhibited markedly distinct XLD signals at the Ru M₃ edge and O K edge, attributable to low-symmetry crystal field effects. These findings unambiguously demonstrate the absence of magnetic ordering in RuO₂ while establishing XLD measurements as a powerful tool for probing magnetic materials with low symmetry.

6. Case study of an exploratory high voltage NASICON-based Na$_4$NiCr(PO$_4$)$_3$ cathode material for sodium-ion batteries

Summary: This study systematically explores a novel NASICON-type Na₄NiCr(PO₄)₃ cathode material aimed at achieving high voltage and multi-electron reactions. X-ray diffraction Rietveld refinement confirmed the stable existence of a rhombohedral NASICON framework, with Raman and infrared spectroscopy further validating the structural features. X-ray photoelectron spectroscopy revealed that Cr is in the +3 oxidation state and Ni exhibits a mixed +2/+3 valence state. Bond valence energy landscape analysis indicated a three-dimensionally interconnected sodium-ion migration network with an energy barrier of 0.468 eV. Electrochemical tests demonstrated that the material delivers a favorable charge capacity at approximately 4.5 V, yet no sodium-ion intercalation was observed during discharge, resulting in negligible discharge capacity. Post-cycling analysis confirmed the structural integrity of the crystal, and although the ion migration energy barrier exhibited a reversal after cycling, ion transport remained feasible, suggesting that irreversible capacity is not primarily due to ionic transport limitations but rather stems from the material’s inherently poor electronic conductivity. These findings elucidate the key challenges in achieving stable reversible capacity within this system and underscore the necessity of doping, structural modification, and electrolyte optimization to realize its potential as a high-voltage cathode material.